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VISHAY SIHG73N60E-GE3 Power MOSFET, N Channel, 73 A, 650 V, 0.032 ohm, 10 V, 2 V SKB 1SKB19-R1208 copper body/front point

USD1053.25 USD1099.25

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  • USA
  • CAN

Ships within 48 hours · Estimated delivery Sep 13 - Sep 18

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Description

copper body/front point

8" (216 x 196 x 986 mm) Shipping Weight 18 lbs (8

Sliding adjustment is made through a non-scratching swivel joint

9 kg) Packaging Info Box Dimensions (LxWxH) 14

Celestron AstroMaster 130EQ-MD 130mm f/5 Reflector Telescope

VISHAY SIHG73N60E-GE3 Power MOSFET, N Channel, 73 A, 650 V, 0.032 ohm, 10 V, 2 V SKB 1SKB19-R1208 copper body/front pointThe SIHG73N60E GE3 is a 650V N channel MOSFET with super junction technology to minimize on resistance and withstand high energy pulse. This E series MOSFET features low input capacitance, reduced switching and conduction losses and simple gate drive circuitry. It is designed for soft switching topologies. Suitable for server and telecom power supply applications. 100% Avalanche rated Low figure of merit Ron X Qg Ultra low gate charge Applications

Exchange/Return Notes
  • We offer a 30-day return/exchange service after receiving.
  • Final sale items are not eligible for returns or exchanges.
  • To process your return/exchange, please contact us at [email protected]
  • Please click here for more details>>> Return & Exchange Policy

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